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| 2SC2411K / 2SC4097 / 2SC1741S Transistors Medium Power Transistor (32V, 0.5A) 2SC2411K / 2SC4097 / 2SC1741S !Features 1) High ICMax. ICMax. = 0.5mA 2) Low VCE(sat). Optimal for low voltage operation. 3) Complements the 2SA1036K / 2SA1577 / 2SA854S. !External dimensions (Units : mm) 2SC2411K 2.90.2 1.90.2 0.95 0.95 (1) (2) 1.1+0.2 -0.1 0.80.1 2SC4097 2.00.2 1.30.1 0.65 0.65 (1) (2) 0.2 0.90.1 0.70.1 1.6+0.2 -0.1 2.80.2 1.250.1 2.10.1 0 0.1 0 0.1 (3) 0.3 0.6 All terminals have same dimensions 0.4 +0.1 -0.05 +0.1 0.15 -0.06 0.3 +0.1 -0 All terminals have same dimensions 0.150.05 !Structure Epitaxial planar type NPN silicon transistor ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector Abbreviated symbol : C* Abbreviated symbol : C* 2SC1741S 40.2 20.2 30.2 (15Min.) 0.45+0.15 -0.05 3Min. 5 2.5 +0.4 -0.1 0.5 0.45 +0.15 -0.05 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base * Denotes hFE !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * PC must not be exceeded. Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 40 32 5 0.5 0.2 150 -55 +150 Unit V V V A W C C * 0.1 0.4 (3) 2SC2411K / 2SC4097 / 2SC1741S Transistors !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current 2SC2411K, 2SC4097 transfer ratio 2SC1741S Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 40 32 5 - - 82 120 - - - Typ. - - - - - - - - 250 6.0 Max. - - - 1 1 390 560 0.4 - - Unit V V V A A - - V MHz pF IC = 100A IC = 1mA IE = 100A VCB = 20V VEB = 4V VCE = 3V, IC = 100mA IC/IB = 500mA/50mA VCE = 5V, IE = -20mA, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz Conditions !Packaging Specifications and hFE Package Code Type 2SC2411K 2SC4097 2SC1741S hFE PQR PQR QRS - - - Basic ordering unit (pieces) T146 3000 Taping T106 3000 - TP 5000 - - hFE values are classified as follows: Item hFE P 82 180 Q 120 270 R 180 390 S 270 560 !Electrical characteristic curves 1000 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) 500 200 100 50 20 10 5 2 1 0.5 0.2 VCE=6V 100 Ta=25C 0.50 mA A 0.45m A 0.40m 500 Ta=25C 2mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.35mA 400 Ta=100C 80C 25C -25C -55C 0.30mA 0.25mA 300 50 0.20mA 0.15mA 0.10mA 200 0.6mA 0.4mA 100 0.05mA 0 0 1 2 3 IB=0A 4 5 0.2mA 0 0 0.1 0.2 IB=0A 1 2 3 4 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics() Fig.3 Grounded emitter output characteristics() 2SC2411K / 2SC4097 / 2SC1741S Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 1 DC CURRENT GAIN : hFE 0.5 500 200 Ta=100C 75C 50C 25C 0C C -25 C -50 TRANSITION FREQUENCY : fT(MHz) Ta Ta=25C lC/lB=10 1000 VCE=3V 500 Ta=25C VCE=5V 200 0.2 100 0.1 100 50 0.05 20 50 0.02 0.5 1 2 5 10 20 50 100 200 500 1000 10 0.1 0.2 0.5 1 2 5 10 20 50 100 200 5001000 -0.5 -1 -2 -5 -10 -20 -50 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) EMITTER CURRENT : IE(mA) Fig.4 Collector-emitter saturation voltage vs. collector current Fig.5 DC current gain vs. collector current Fig. 6 Gain bandwidth product vs. emitter current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib (pF) 50 Ta=25C f=1MHz IE=0A IC=0A Cib 20 10 Co b 5 2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB(V) EMITTER TO BASE VOLTAGE : VEB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage |
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